Optimal structural design of nanoscale dual-gate air-channel triode via 3D simulation

A nanoscale air-channel triode with dual-gate structure was proposed and systematically simulated. The simulation results indicate that with an increase in the gate width, the transconductance of the device initially rises before reaching saturation. Moreover, a thinner gate insulation layer enhances the gate’s ability to modulate current in the channel. When the gate size sufficiently covers the air channel, a decrease in the gate width leads to a higher cutoff frequency of the device. Furthermore, the top and bottom gate structures with unequal dimensions are advantageous for enhancing the device cutoff frequency, particularly when the top gate width exceeds the channel length, while the bottom gate width is narrower. This configuration not only facilitates radiation isolation of the air channel beneath the top gate but also contributes to an improved cutoff frequency.