材料科学
光电子学
光电探测器
电子迁移率
光电导性
光电二极管
带隙
载流子
作者
Anupam Prasoon,Preetam Dacha,Heng Zhang,Elif Ünsal,Mike Hambsch,Alexander Croy,Shuai Fu,Nguyen Ngan Nguyen,Kejun Liu,Haoyuan Qi,Sein Chung,Minyoung Jeong,Lei Gao,Ute Kaiser,Kilwon Cho,Hai I. Wang,Renhao Dong⧫,Gianaurelio Cuniberti,Mischa Bonn,Stefan C. B. Mannsfeld
标识
DOI:10.1002/adma.202505810
摘要
Photodetectors are fundamental components of modern optoelectronics, enabling the conversion of light into electrical signals. The development of high-performance phototransistors necessitates materials with both high charge carrier mobility and robust photoresponse. However, achieving both in a single material poses challenges due to inherent trade-offs. Herein, this study introduces a polybenzimidazole-(1,3-diazole)-based 2D polymer (2DPBI), synthesized as few-layer, crystalline films covering ≈28 cm2 on the water surface at room temperature, with large crystalline domain sizes ranging from 110 to 140 µm2. The 2DPBI incorporates a π-conjugated photoresponsive porphyrin motif through a 1,3-diazole linkage, exhibiting enhanced π-electron delocalization, a narrow direct band gap of ≈1.18 eV, a small reduced electron-hole effective mass (m* = 0.171 m0), and a very high resonant absorption coefficient of up to 106 cm-1. Terahertz spectroscopy reveals excellent short-range charge carrier mobility of ≈240 cm2 V-1 s-1. Temperature-dependent photoconductivity measurements and theoretical calculations confirm a band-like charge transport mechanism. Leveraging these features, 2DPBI-based phototransistors demonstrate an on/off ratio exceeding 108, photosensitivity of 1.08 × 107, response time of 1.1 ms, and detectivity of 2.0 × 1013 Jones, surpassing previously reported standalone few-layer 2D materials and are on par with silicon photodetectors. The unique characteristics of 2DPBI make it a promising foundation for future optoelectronic devices.
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