超级电容器
热液循环
电容
拉曼光谱
兴奋剂
电极
水热合成
材料科学
过渡金属
功率密度
金属
化学工程
纳米技术
光电子学
分析化学(期刊)
化学
电化学
冶金
工程类
催化作用
热力学
物理化学
功率(物理)
物理
光学
色谱法
生物化学
作者
Wang Zheng,Jiawei Wang,Fumin Wang,Xubin Zhang,Xinyuan He,Shuai Liu,Zhengliang Zhang,Zhiwei Zhang,XingTao Wang
标识
DOI:10.1016/j.jallcom.2023.169505
摘要
Elemental-doped is considered as an effective strategy to modulate the electronic structure of Metallic MoS2 (i.e., 1T-MoS2) and enhance its electrochemical performance. Herein, DFT is applied to predict the electronic structure of different transition metals (TMs) doped 1T-MoS2. Based on the results, stable Ni-doped 1T-MoS2 (N3MS) is synthesized in a propionic acid (PA) aided system. Electrochemical tests show that N3MS possesses an excellent specific capacitance of 2461.2 F·g−1 at 1 A·g−1 and a cycle retention rate of 85.67 % at 10 A·g−1 for 1000 cycles due to the critical contribution of Ni-doped to electronic structure modulation. Meanwhile, in-situ Raman measurements show that the active sites of N3MS are Mo3+ and Ni2+. The assembled N3MS//ZnO/ZnS-C hybrid device shows a specific capacitance of 242.28 F·g−1 at 1 A·g−1, an excellent energy density of 65.96 Wh·kg−1 at the power density of 700 W·kg−1 and the excellent stability for up to 2000 cycles (77.26 % retention at 5 A·g−1). This work proves the significant contribution of elemental doping to modulate electronic structures and improve electrochemical performance.
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