结晶
材料科学
无定形固体
钛酸锶
Crystal(编程语言)
化学物理
晶体生长
相(物质)
结晶学
成核
相界
纳米技术
薄膜
化学工程
化学
计算机科学
有机化学
工程类
程序设计语言
作者
Tesia D. Janicki,Rui Liu,Soohyun Im,Zhongyi Wan,Serkan Bütün,Shaoning Lu,Nasir Basit,Paul M. Voyles,Paul G. Evans,J. R. Schmidt
标识
DOI:10.1021/acs.cgd.4c00081
摘要
Strontium titanate (SrTiO<sub>3</sub>, STO) is a complex metal oxide with a cubic perovskite crystal structure. Due to its easily described and understood crystal structure in the cubic phase, STO is an ideal model system for exploring the mechanistic details of solid-phase epitaxy (SPE) in complex oxides. SPE is a crystallization approach that aims to guide crystal growth at low homologous temperatures to achieve targeted microstructures. Beyond planar thin films, SPE can also exploit the addition of a chemically inert, noncrystallizing, amorphous obstacle in the path of crystallization to generate complex three-dimensional structures. The introduction of this mask fundamentally alters the SPE process, inducing a transition from two- to three-dimensional geometries and from vertical to lateral crystal growth under the influence of the crystal/mask/amorphous boundary. Using a combination of molecular dynamics simulations and experiments, we identify several unique phenomena in the nanoscale growth behaviors in both conventional (unmasked) and masked SPE. Examining conventional SPE of STO, we find that crystallization at the interface is strongly correlated to, and potentially driven by, density fluctuations in the region of the amorphous STO near the crystalline/amorphous interface with a strong facet dependence. In the masked case, we find that the crystalline growth front becomes nonplanar near contact with the mask. We also observe a minimum vertical growth requirement prior to lateral crystallization. Both phenomena depend on the relative bulk and interfacial free energies of the three-phase (crystal/mask/amorphous) system.
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