0.5 μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration

Copper to copper hybrid bonding is a key area of development for many devices. A major focus of hybrid bonding development is reducing the size of the bond pads. The current hybrid bonding node is 0.5μm pads at 1μm pitch. While scaling down from this size new challenges will be encountered in CMP, mask layout, and bonding tool configuration. By understanding the incoming wafer conditions and how tool settings impact bonding, we have achieved void free bonding of 0.25μm bond pads at 0.5μm pitch with a maximum displacement <50nm across the wafer entire.