Low‐Symmetry 2D t‐InTe for Polarization‐Sensitive UV‐Vis‐NIR Photodetection

Abstract Polarization‐sensitive photodetection grounded on low‐symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio‐identification, optical communications, near‐infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV–vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high‐performance anisotropic photodetection. Herein, 2D t‐ InTe crystal is introduced into anisotropic systems and developed to realize broadband‐response and high‐anisotropy‐ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low‐symmetry lattice characteristic, 2D t‐ InTe‐based photodetector exhibits a UV–vis–NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in‐plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure‐activity relationship of 2D t‐ InTe crystal, and identifies 2D t‐ InTe as a prospective candidate for high‐performance polarization‐sensitive optoelectronics, laying the foundation for future multifunctional device applications.