Performance Enhancement of Multiple Quantum Shell Nanowire‐Based Micro‐Light Emitting Diodes with Underlying GaInN/GaN Superlattices

GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) are of great interest as high‐efficiency micro‐light emitting diodes (micro‐LEDs), mainly due to their quantum confined Stark effect suppression and dry etching insensitivity features. Herein, morphological and device properties corresponding to NW‐LEDs with different numbers of GaInN/GaN superlattices (SLs) are evaluated. The scanning electron microscopy measurements revealed that the polar‐plane MQS are shrunken, while the semipolar‐plane underwent expansion upon the introduction of the SLs. The current density–voltage–light output analysis at low current density indicates that samples with a greater number of SL pairs exhibit higher light output. Electroluminescence spectra show that NWs lacking SLs exhibit an emission wavelength of 700 nm, which is derived from indium‐rich clusters in polar‐plane MQS, whereas those with SLs emit at a significantly shorter wavelength of 560 nm. The reduction in the polar‐plane MQS coupled with the enhancement in MQS quality resulting from the SLs is identified as the primary contributing factor. Additionally, the external quantum efficiency factor for NW‐LEDs, which remained consistent even as the emission area decreased, is assessed. These findings suggest that NW‐LEDs with SLs possess the potential to mitigate the emission degradation associated with sidewall etching and realize high‐efficiency micro‐LEDs.