Future of plasma etching for microelectronics: Challenges and opportunities

微电子 蚀刻(微加工) 等离子体刻蚀 纳米技术 反应离子刻蚀 工程物理 半导体工业 材料科学 计算机科学 工程类 制造工程 图层(电子)
作者
G. S. Oehrlein,Stephan M. Brandstadter,Robert L. Bruce,Jane P. Chang,Jessica C. DeMott,Vincent M. Donnelly,Rémi Dussart,Andreas Fischer,Richard A. Gottscho,Satoshi Hamaguchi,M. Honda,Masaru Hori,Kenji Ishikawa,S. Jaloviar,Keren J. Kanarik,Kazuhiro Karahashi,Akiteru Ko,H. Kothari,Nobuyuki Kuboi,Mark J. Kushner
出处
期刊:Journal of vacuum science and technology [American Vacuum Society]
卷期号:42 (4) 被引量:120
标识
DOI:10.1116/6.0003579
摘要

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.
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