摩擦电效应
材料科学
半导体
纳米技术
光电子学
直流电
电压
兴奋剂
纳米发生器
碳纳米管
十二烷基苯
电气工程
复合材料
磺酸盐
钠
工程类
冶金
压电
作者
Tianmei Lv,Renwei Cheng,Chuanhui Wei,Erming Su,Tao Jiang,Feifan Sheng,Peng Xiao,Kai Dong,Zhong Lin Wang
标识
DOI:10.1002/aenm.202301178
摘要
Abstract The tribovoltaic effect is the direct‐current (DC) output that results from sliding a p‐type semiconductor on top of an n‐type semiconductor, and it is caused by the electron–hole pairs generated However, the rigid structure of traditional semiconductor limits its potential application in wearable fields. Here, p–type and n–type fabric with semiconductor properties are prepared by doping small organic molecules of cetyltrimethylammonium bromide and sodium dodecylbenzene sulfonate on the carbon atoms of single–wall carbon nanotubes (SWCNTs), and three all‐fabric direct‐current triboelectric nanogenerators based on the tribovoltaic effect (AFDC‐TENG) are developed , which exhibit high flexibility, satisfactory comfort, and stable DC output. In addition, the effects of structural parameters and environmental factors on the electrical output of AFDC‐TENG are systematically discussed. The output voltage, current, and power density of p‐type AFDC‐TENG can reach 0.2 V, 0.29 µA, and 45.5 mV m −2 at a maximum speed of 0.2 m s −1 and a sliding frequency of 1 Hz, respectively. This work proposes a simple and scalable design form for all‐fabric DC power supply devices, which has potential applications in the future micro/nano energy or self‐powered flexible sensors.
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