Dependence of Ta2O5 memristor storage and synaptic performances on oxygen content

Abstract In order to meet the exponentially increased demand for data processing, researchers are exploring memristors to emulate synapse or in-memory computing. To further enhance its performance, the impact of oxygen content on storage and synaptic performances is investigated based on Ag/Ta x O y /ITO memristors. The conductive filament-dominated mechanism with two kinds of ions is validated by multiple methods. By optimizing the oxygen content, the synaptic weight modulation ability increased almost sevenfold. Additionally, Boolean logic operations are implemented with >10 5 switching cycles and in situ stored for more than 10 5 s. Our work lays the foundation for optimizing memory storage and neuromorphic performances in future in-memory computing.