光电子学
光电探测器
光电二极管
响应度
暗电流
材料科学
活动层
二极管
存水弯(水管)
比探测率
载流子
有机半导体
半导体
噪音(视频)
图层(电子)
纳米技术
物理
计算机科学
气象学
薄膜晶体管
人工智能
图像(数学)
作者
Xiao Ma,René Janssen,Gerwin H. Gelinck
标识
DOI:10.1002/admt.202300234
摘要
Abstract The performance of organic photodetectors is steadily improving, and the specific detectivity, as a key figure of merit, has reached values of 10 12 –10 13 Jones, i.e., comparable to that of silicon diodes but still considerably lower than the intrinsic limit. As with other semiconductor devices, the electrical performance of state‐of‐the art organic photodiodes (OPDs) is presently determined to a high degree by the presence of chemical impurities or structural defects which create carrier trapping states within the bandgap of organic active layer. This review aims to provide a comprehensive and timely account of trap‐assisted charge generation and recombination in OPDs, with emphasis on the impact of these phenomena on photodetector performance parameters such as, noise and dark current density, responsivity, response speed, and ultimately, specific detectivity.
科研通智能强力驱动
Strongly Powered by AbleSci AI