材料科学
纳米技术
危险废物
有毒气体
制作
有害空气污染物
污染物
吸附
可靠性(半导体)
氧化物
环境污染
污染
过程(计算)
解吸
纳米结构
氡气
作者
Goda Vasantharao,Jay Chandra Dhar
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2025-11-04
卷期号:36 (46): 462002-462002
被引量:2
标识
DOI:10.1088/1361-6528/ae1b0c
摘要
In recent years, atmospheric pollution has been increasing day by day due to the rapid growth of industrialization, urbanization and motor vehicles. As a result, a large number of pollutants containing harmful and toxic gases like NO2, NH3, H2, H2S and C3H6O etc. are being released into the environment. This detrimental increase can cause adverse effects on human life, necessitating monitoring and safety measures. Gas sensors play a crucial role in this regard by monitoring and alerting when pollutant levels exceed permissible limits. Metal oxide semiconductor (MOS) gas sensors have gained much popularity due to their good stability, tunable chemical properties, simple fabrication process and cost effectiveness. SnO2is the most widely used MOS material for detecting various toxic and hazardous gases, owing to its excellent physical and chemical properties, high reliability and short adsorption and desorption times. In this review, we elevated the role of SnO2in detecting various toxic and hazardous gases and highlighting different synthesis methods with various structural and morphological modifications are summarized. By reviewing the latest advancements, this paper proposes several future research directions for SnO2-based gas sensors.
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