High performance amorphous IGO TFTs grown at low temperature

Polycrystalline indium gallium oxide has been widely studied in the domain of oxide thin film transistors (TFTs) due to its high mobility. However, there are few researches focus on amorphous IGO ( a ‐IGO), which has the advantage of large area display. Herein, high‐performance a ‐IGO TFTs are demonstrated by magnetron sputtering method with simple process. The efficiency of a ‐IGO TFTs fabricated under various conditions are evaluated, and a ‐IGO TFTs prepared by 27 nm thin films grown at 220 °C have the best electrical properties. It exhibits the mobility of 35 cm 2 V ‐1 s ‐1 , threshold voltage of 0.5 V, subthreshold swing of 0.8 V/dec, and the on/off current ratio over 10 6 . This is due to the precise control of the deposition energy state by temperature during sputtering and the influence of the semiconductor layer thickness on the distribution of the accumulation layer. The results present here demonstrate a simple fabrication method for high‐performance amorphous oxide thin film transistors, providing a new option for display driver circuits. This article is protected by copyright. All rights reserved.