超导电性
凝聚态物理
环境压力
半导体
超导转变温度
绝缘体(电)
电子结构
高压
材料科学
兴奋剂
相变
工程物理
电阻率和电导率
纳米技术
物理
热力学
光电子学
量子力学
作者
Mahmoud Abdel-Hafiez,Li Fen Shi,Jinguang Cheng,Irina G. Gorlova,S. G. Zybtsev,V. Ya. Pokrovskiĭ,Lingyi Ao,Junwei Huang,Hongtao Yuan,A. N. Titov,Olle Eriksson,Chin Shen Ong
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-04-29
卷期号:24 (18): 5562-5569
被引量:9
标识
DOI:10.1021/acs.nanolett.4c00824
摘要
Transition metal trichalcogenides (TMTCs) offer remarkable opportunities for tuning electronic states through modifications in chemical composition, temperature, and pressure. Despite considerable interest in TMTCs, there remain significant knowledge gaps concerning the evolution of their electronic properties under compression. In this study, we employ experimental and theoretical approaches to comprehensively explore the high-pressure behavior of the electronic properties of TiS3, a quasi-one-dimensional (Q1D) semiconductor, across various temperature ranges. Through high-pressure electrical resistance and magnetic measurements at elevated pressures, we uncover a distinctive sequence of phase transitions within TiS3, encompassing a transformation from an insulating state at ambient pressure to the emergence of an incipient superconducting state above 70 GPa. Our findings provide compelling evidence that superconductivity at low temperatures of ∼2.9 K is a fundamental characteristic of TiS3, shedding new light on the intriguing high-pressure electronic properties of TiS3 and underscoring the broader implications of our discoveries for TMTCs in general.
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