Dependence of Differential Conductance of Electrochemical Transistor on Overpotential in Fully Non-Adiabatic Regime

The dependence of the differential conductance of the electrochemical transistor on the overpotential at a constant bias voltage is studied theoretically within the fully non-adiabatic (diabatic) transistor operation regime. An electrochemical transistor includes a redox group with one spin-degenerated electronic level, for which the Coulomb repulsion between the electrons with opposite spin projection is taken into account. The electrodes are considered in a model with a wide conduction band. Using the numerical calculations, the regions of the highest differential conductance, which essentially depend on the system’s parameters, are revealed. The approximate analytical methods enable us to elucidate the physical meaning of these regions. The information on these regions is of high practical importance, because in these regions the tunneling current changes abruptly with a change in the voltage across the electrodes.