Research on enhancement of image effect of silicon-based near infrared detector based on up-conversion material by cascade material fusion method

In view of the limitation of traditional infrared detector, such as high cost, short exposure time and cooling requirement, silicon based near infrared detector based on up-conversion imaging technology can provide an effective way to break through the above limitation. However, the application of this kind of detector is limited by the low intensity of upconversion materials. In this paper, a fusion method based on cascade material (CM) was proposed to improve the conversion luminescence intensity of up-conversion materials, so as to enhance the imaging effect of the silicon-based near infrared detector under the excitation of 1550 nm near infrared light. The mechanism of energy level transition between CM was studied theoretically, and CM film was prepared. The enhancement effect of up-conversion imaging under excitation of 1550nm near infrared light was measured. The experimental results show that the luminescence intensity of CM film is 2.72 times higher than that of pure material film. This all-optical up-conversion imaging system has a broad application prospect in the field of integrated infrared imaging.