Characterizations of ZnS/CuInS<sub>2</sub> Film Fabricated by Electrochemical Deposition Process for Solar Cell Devices

In this study, CuInS2 (CIS) films were fabricated by a two-step, non-vacuum process. Electrochemical deposition (ECD) was first used to prepare Cu-In precursors on Mo substrate under constant current. Then, CuInS2 films were prepared by sulfurization of the Cu-In precursors in sulfur atmosphere. The surface morphologies, compositions, and transmittance of the CuInS2 and ZnS films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and UV-VIS, respectively. The results show that a high-quality CIS thin film solar cells by low-cost, non-vacuum process could be obtained.