纳米片
材料科学
硅
半导体
电子结构
密度泛函理论
理论(学习稳定性)
氢
图层(电子)
纳米技术
光电子学
凝聚态物理
计算化学
物理
化学
计算机科学
机器学习
量子力学
作者
Jian Song,Feng Li,Kaiming Deng,Xiao Chuanyun,Kan Er-Jun,Lu Rui-Feng,Haiping Wu
出处
期刊:Chinese Physics
[Science Press]
日期:2012-01-01
卷期号:61 (24): 246801-246801
标识
DOI:10.7498/aps.61.246801
摘要
The stability and electronic structure of Si6H4Ph2 are investigated by a comparative study of pure silicon nanosheet Si6, hydrogen-passivated silicon nanosheet Si6H6 and phenyl-passivated silicon nanosheet Si6H4Ph2 using density functional calculations. The mechanism on the stability of Si6H4Ph2 is elucidated. In addition, by examining the electronic structures of Si6H6 and Si6H4Ph2, we find the they both behave like an indirect gap semiconductor with a quite large gap.
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