Limited dose and angle-directed beam atomic layer etching and atomic layer deposition processes for localized film coatings on 3D sidewall structures

Processes are described for localized film deposition on the sidewalls of nonplanar structures. Limited dose atomic layer etching, angle-directed beam atomic layer etching, and limited dose and saturated dose atomic layer deposition are described as sequential processes to provide localized coatings on the bottom, or the center, or the top and bottom of 3D nonplanar features. Applications are described for film thickness adjustments on trench sidewalls and doping of finFETs.