Study of electrical conductivity in metallic n-type InP semiconductor at low temperature in presence of strong magnetic field

We have studied the transport properties in metallic n-type InP semiconductor. We show that the dependence on temperature of metallic electrical conductivity obey to the law =σ(T=0)+mT1/2. We have found that the coefficient of thermal variation m changes sign when the magnetic field increases. We have proposed several complex theories to provide a physical explanation for this sign change such as the Zeeman effect, the effects of weak localization and the effects of electron-electron interactions.