电容
插入损耗
材料科学
网络拓扑
拓扑(电路)
光电子学
电气工程
电子工程
电极
计算机科学
化学
工程类
操作系统
物理化学
作者
Ajit Kanale,Sneha Narasimhan,Tzu-Hsuan Cheng,Aditi Agarwal,Suyash Sushilkumar Shah,B. Jayant Baliga,Subhashish Bhattacharya,Douglas C. Hopkins
出处
期刊:IEEE Workshop on Wide Bandgap Power Devices and Applications
[Institute of Electrical and Electronics Engineers]
日期:2021-11-07
卷期号:: 112-117
被引量:8
标识
DOI:10.1109/wipda49284.2021.9645130
摘要
Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1. 17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1. 52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.
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