70‐2: Invited Paper: Advanced Oxide TFT Technology for OLED Display by Applying ALD Process

Oxide thin film transistors (TFTs) have been successfully developed by using atomic layer deposition (ALD) process in terms of gate insulator (GI) and oxide channel layer. Oxide TFTs fabricated by ALD process have the several advantages in device reliability and chemical composition controllability over a wide range of mobilities. In this paper, the high mobility (~40cm2/Vs) and high reliability of oxide TFTs fabricated by ALD process are discussed, and a high resolution (441ppi), high operation frequency (120Hz), 6.58‐inch AMOLED panel with an LTPO structure is demonstrated