Structural and Charging Stability of Metal Nanodot Memory in SiO2; First-Principles Study
作者
Takashi Nakayama,Shota Yamazaki,Yuto Shiraishi
出处
期刊:ECS transactions [Institute of Physics] 日期:2018-07-20卷期号:86 (2): 69-75
标识
DOI:10.1149/08602.0069ecst
摘要
Metal nanodots are promising systems for future non-volatile memory devices. However, metal-atom dissociation from metal nanodots induces serious degradation during repetitious charge injection. We study which metal nanodot is thermally stable in SiO 2 and which kind of metal has large charge retention, using the first-principles calculations. We show that nanodots made of metal atoms with a large number of d-electrons, such as Au, are unstable. On the other hand, nanodots made of metal atoms with small number of d-electrons, such as W, have both large structural and large charge-retention stability. These features are closely related to the competition between the metal-metal, metal-Si, and metal-O interactions.