掺杂剂
掺杂剂活化
硼
硅
退火(玻璃)
材料科学
二次离子质谱法
薄板电阻
氧气
氧化物
图层(电子)
分析化学(期刊)
砷
扩散
扩展阻力剖面
离子
兴奋剂
无机化学
化学工程
化学
纳米技术
光电子学
冶金
有机化学
工程类
物理
热力学
色谱法
作者
Xi Zhang,Daniel Connelly,Hideki Takeuchi,Marek Hytha,Robert J. Mears,L. Rubin,Tsu‐Jae King Liu
摘要
The effects of oxygen-inserted (OI) layers and a low-temperature-deposited oxide (LTO) capping layer on rapid thermal activation of ultrashallow implanted boron, phosphorus, and arsenic atoms in silicon (Si) are investigated using sheet resistance (Rsh) measurements, secondary ion mass spectrometry analyses, and technology computer-aided design simulations. The experimental findings suggest that the electrical activation of dopants in Si is not significantly affected by the presence of OI layers so that they can be effective for achieving lower Rsh along with shallower junction depth, thanks to reduced dopant loss and diffusion during thermal annealing. On the other hand, an LTO capping layer is found to result in larger Rsh associated with the lower peak active dopant concentration as a result of dopant segregation and/or reduced uphill diffusion. The presence of OI layers is found to mitigate these detrimental effects.
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