钝化
薄膜晶体管
材料科学
物理
光电子学
纳米技术
图层(电子)
作者
Ablat Abliz,Da Wan,Jui-Yuan Chen,Lei Xu,Jia He,Yanbing Yang,Haiming Duan,Chuansheng Liu,Changzhong Jiang,Huipeng Chen,Tao Guo,Lei Liao
标识
DOI:10.1109/ted.2018.2836146
摘要
This paper investigates the effects of different passivation layers (PVLs) on the electrical performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film transistors (TFTs). By rational design, the fabricated a-InGaZnO TFT with hafnium oxide and aluminum oxide (HfO 2 /Al 2 O 3 ) dual PVLs exhibits a field-effect mobility of 13.5 cm 2 /Vs, low sub threshold swing of 0.32 V/decade, and especially, small threshold voltage shifts of 0.5 (-0.6) V and 1.1 (-1.2) V under positive (negative) gate bias, and light illumination stress at the relative humidity of 40%. Furthermore, the a-In-Ga-ZnO TFTs with HfO 2 /Al 2 O 3 dual PVLs maintain reasonable mobility and electrical performance even exposure to ambient condition for up to four months. This enhanced stability is attributed to the presence of high-quality HfO 2 /Al 2 O 3 dual PVLs, which not only could suppress the photodesorption, reduce the total trap density and subgap photoexcitation behavior, but also protect the channel from environmental effects. Thus, the rational-designed HfO 2 /Al 2 O 3 dual PVLs passivated a-In-Ga-ZnO TFTs with superior reliability represent a great step toward the achievement of long-term reliable zinc oxide-based oxide TFTs.
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