量子点
超晶格
激子
超短脉冲
显微镜
比克西顿
材料科学
航程(航空)
纳米晶
纳米技术
凝聚态物理
物理
光电子学
光学
激光器
复合材料
作者
Seog Joon Yoon,Zhi Guo,P. Cecilia dos Santos Claro,Elena V. Shevchenko,Libai Huang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2016-07-07
卷期号:10 (7): 7208-7215
被引量:70
标识
DOI:10.1021/acsnano.6b03700
摘要
Long-range charge and exciton transport in quantum dot (QD) solids is a crucial challenge in utilizing QDs for optoelectronic applications. Here, we present a direct visualization of exciton diffusion in highly ordered CdSe QDs superlattices by mapping exciton population using ultrafast transient absorption microscopy. A temporal resolution of ∼200 fs and a spatial precision of ∼50 nm of this technique provide a direct assessment of the upper limit for exciton transport in QD solids. An exciton diffusion length of ∼125 nm has been visualized in the 3 ns experimental time window and an exciton diffusion coefficient of (2.5 ± 0.2) × 10(-2) cm(2) s(-1) has been measured for superlattices constructed from 3.6 nm CdSe QDs with center-to-center distance of 6.7 nm. The measured exciton diffusion constant is in good agreement with Förster resonance energy transfer theory. We have found that exciton diffusion is greatly enhanced in the superlattices over the disordered films with an order of magnitude higher diffusion coefficient, pointing toward the role of disorder in limiting transport. This study provides important understandings on energy transport mechanisms in both the spatial and temporal domains in QD solids.
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