发光二极管
铟
光电子学
电致发光
材料科学
外延
量子阱
二极管
橙色(颜色)
光学
纳米技术
物理
激光器
图层(电子)
作者
Horng-Shyang Chen,Chung‐Hsin Lu,Dong-Ming Yeh,Chi‐Feng Huang,JianJang Huang,C. C. Yang
出处
期刊:IEEE Photonics Technology Letters
[Institute of Electrical and Electronics Engineers]
日期:2006-11-01
卷期号:18 (21): 2269-2271
被引量:32
标识
DOI:10.1109/lpt.2006.884884
摘要
The implementations of an orange and a red light-emitting diode (LED), which are fabricated with a prestrained InGaN-GaN quantum-well (QW) epitaxy structure, are demonstrated. The prestrain condition is created by growing a low-indium QW before the growth of five high-indium QWs. Without the prestrain condition, the five high-indium QWs of the same growth condition lead to green electroluminescence emission. With the prestrained growth, indium incorporation in the QWs grown after the low-indium one becomes higher and hence the orange-red LEDs can be fabricated for elongating the emission wavelength by more than 100 nm. Although the crystal quality and electrical properties of the orange-red LEDs may need to be improved, our results have shown the important effect of prestrained growth for elongating the LED wavelength
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