同步辐射
杂质
衍射
材料科学
原子单位
结晶学
离子
水溶液
晶体结构
金属
凝聚态物理
物理
光学
物理化学
化学
量子力学
冶金
作者
S. A. de Vries,P. Goedtkindt,S.L. Bennett,Willem Jan Huisman,M. J. Zwanenburg,Detlef‐M. Smilgies,James J. De Yoreo,W.J.P. van Enckevort,P. Bennema,Elias Vlieg
标识
DOI:10.1103/physrevlett.80.2229
摘要
With this study on KDP, we present an interface atomic structure determination of a crystal in contact with its growth solution. Using x-ray diffraction at a third-generation synchrotron radiation source, the structure of both the ${101}$ and ${100}$ faces has been determined. We found that the ${101}$ faces are terminated by a layer of ${\mathrm{K}}^{+}$ ions and not by ${\mathrm{H}}_{2}{\mathrm{PO}}_{4}^{\phantom{\rule{0ex}{0ex}}\ensuremath{-}}$ groups, resolving a long-standing issue that could not be predicted by theory. This result leads to an atomic-scale explanation of the influence of metal impurities on the macroscopic growth morphology.
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