等离子体子
声子
凝聚态物理
兴奋剂
拉曼散射
拉曼光谱
化学气相沉积
简并半导体
波矢
材料科学
杂质
散射
化学
光电子学
光学
物理
有机化学
作者
Kai Ding,Qiaoyu Hu,W. W. Lin,Jianan Huang,Fuzhi Huang
摘要
We have investigated the interaction between carriers and polar phonons by using Raman scattering spectroscopy in highly conductive Al-doped ZnO films grown by metalorganic chemical vapor deposition. Different from the longitudinal optical phonon-plasmon coupled modes (LOPPCM) observed in nondegenerate ZnO, an A1(LO)-like mode appears at the low frequency side of the uncoupled A1(LO) mode, and it monotonically shifts to higher frequencies and approaches to the uncoupled A1(LO) mode as Al composition increases. Based on line shape calculations, the A1(LO)-like mode is assigned to the large wave-vector LOPPCM arising from nonconserving scattering dominated by the Al impurity-induced Fröhlich mechanism. Benefiting from the nonmonotonic Al composition dependence of the electron density, it is revealed that the LOPPCM depends mainly on the doping level but not the carrier concentration.
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