X射线光电子能谱
氧化法
氧化物
图层(电子)
分析化学(期刊)
范德瓦尔斯力
表层
光谱学
材料科学
化学
物理化学
分子
核磁共振
纳米技术
化学工程
物理
冶金
工程类
有机化学
量子力学
色谱法
作者
Hiroyuki Bando,K. Koizumi,Y. Oikawa,K. Daikohara,V. A. Kulbachinskiı̆,H. Ozaki
标识
DOI:10.1088/0953-8984/12/26/307
摘要
The process of oxidation of the Bi2Te3 surface was investigated by x-ray photoelectron spectroscopy (XPS). The oxidized surface layer was found to have a definite thickness, with configurations where O is bonded with Bi and Te, and Bi and Te are bonded with three and four oxygens, respectively. The oxidation time dependence of the oxidized layer thickness d(t) estimated from the XPS behaved as (t-t0)1/2 when d(t) was smaller than the thickness of a single oxidized quintuple atomic layer in our oxide model and behaved as t-t1 when it was larger than that. Experimental data were compared to our oxidation process model for the layered structure with the van der Waals gap and very good agreement was found.
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