量子点
砷化镓
反键分子轨道
介观物理学
材料科学
分子物理学
光致发光
激光线宽
镓
凝聚态物理
化学物理
物理
纳米技术
光电子学
光学
量子力学
激光器
电子
原子轨道
冶金
作者
G. Schedelbeck,W. Wegscheider,M. Bichler,G. Abstreiter
出处
期刊:Science
[American Association for the Advancement of Science]
日期:1997-12-05
卷期号:278 (5344): 1792-1795
被引量:275
标识
DOI:10.1126/science.278.5344.1792
摘要
Atomically precise quantum dots of mesoscopic size have been fabricated in the gallium arsenide-aluminum gallium arsenide material system by cleaved edge overgrowth, with a high degree of control over shape, composition, and position. The formation of bonding and antibonding states between two such "artificial atoms" was studied as a function of quantum dot separation by microscopic photoluminescence (PL) spectroscopy. The coupling strength within these "artificial molecules" is characterized by a systematic dependence of the separation of the bonding and antibonding levels, and of the PL linewidth, on the "interatomic" distance. This model system opens new insights into the physics of coupled quantum objects.
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