欧姆接触
跨导
接触电阻
材料科学
光电子学
晶体管
场效应晶体管
电子迁移率
电容
电气工程
电压
电极
纳米技术
化学
工程类
物理化学
图层(电子)
作者
J.B. Boos,B. R. Bennett,W. Kruppa,D. Park,J. Mittereder,Robert B. Bass,M. E. Twigg
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:1999-05-01
卷期号:17 (3): 1022-1027
被引量:43
摘要
We report on the fabrication and characteristics of Pd/Pt/Au ohmic contacts that have been used in AlSb/InAs high electron mobility transistors (HEMTs) with low access resistance. The metalization exhibits minimal in-diffusion and a contact resistance of 0.08 Ω mm after a 175 °C hot-plate heat treatment. By comparison, AuGe/Ni/Pt/Au ohmic contact metalizations formed using a 300 °C rapid thermal anneal exhibit a contact resistance of 0.11 Ω mm, but with considerable Au in-diffusion. Using the Pd/Pt/Au contact, 0.6 μm gate-length AlSb/InAs HEMTs exhibit a low-field source-drain resistance of 0.47 Ω mm and a transconductance above 1 S/mm. After removal of the gate bonding pad capacitance from an equivalent circuit, an fTLg product of 38 GHz μm is obtained at VDS=0.4 V. HEMTs with a 60 nm gate length exhibit a low-field source-drain resistance of 0.35 Ω mm and a measured fT of 90 GHz at a drain voltage of only 100 mV. These fTLg and fT values are the highest reported for any field effect transistor at these drain voltages.
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