Silicide technology for USJ in next technology node

Silicide technology for ultra-shallow junction in next technology node is discussed. Salicide material is changed from low resistivity refractory metal silicide to near-noble metal silicide from the view point of less consumption of Si by silicidation. The pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with CoSi/sub 2/.