三维集成电路
中间层
通过硅通孔
集成电路封装
硅
纵向一体化
材料科学
炸薯条
成套系统
系统集成
计算机科学
电子工程
集成电路
光电子学
电气工程
工程类
纳米技术
操作系统
蚀刻(微加工)
图层(电子)
政治学
法学
出处
期刊:International Symposium on Advanced Packaging Materials
日期:2011-10-01
卷期号:: 462-488
被引量:171
标识
DOI:10.1109/isapm.2011.6105753
摘要
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
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