Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits

Abstract The functionalization of polymer dielectrics with self‐assembly monolayer is still a big issue to be resolved due to the lack of particular anchoring sites on their surface for specific binding. To this end, hydroxyl groups are a kind of commonly used anchoring sites, which can be effectively produced on polymer surface by oxygen plasma treatment. In this work, the modification methods are investigated and the assembly conditions of self‐assembly monolayer are characterized on the surface of low‐k polyimide (PI) gate dielectric layers. As a result, the device performance can be enhanced by an order of magnitude under the optimal modified state compared with the initial state. In addition, the charge transport mechanism of organic semiconductor on PI surface is studied through temperature‐variable experiments. Furthermore, organic logic circuits (NAND gate, NOR gate, inverter, and oscillator) are manufactured using modified PI as insulating layers. The functionalization of polymer dielectrics with self‐assembly monolayer offers an effective strategy to improve the device performance in organic electronics.