材料科学
电介质
电阻率和电导率
空位缺陷
电容器
铋
工作(物理)
活化能
凝聚态物理
光电子学
电压
电气工程
热力学
冶金
化学
物理
工程类
有机化学
作者
Hao Pan,Nan Feng,Xiangyang Xu,Weiwei Li,Qinghua Zhang,Shun Lan,Yiqian Liu,Haozhi Sha,Ke Bi,Bo Xu,Jing Ma,Lin Gu,Rong Yu,Yang Shen,Xiao Renshaw Wang,Judith L. MacManus‐Driscoll,Chong-Lin Chen,Nan Chen,Yuanhua Lin
标识
DOI:10.1016/j.ensm.2021.08.027
摘要
The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress defects, a new approach, i.e., constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO3-based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen-pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm−3), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications.
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