Investigation of Parameters of Band-Pass Filters on Conductivity of p-Si and p-Ge Semiconductors

Wireless communication technologies, including 5G and others, require devices with a reconfigurable frequency range.Frequency selection is performed with the use of various band-pass filters.Structures of the microstrip band-pass filters are popular due to their small dimensions and a convenient procedure of manufacture.We have calculated design parameters of parallel-coupled half-wave band-pass filter by using transmission line theory.The obtained design parameters have been verified with Sonnet and CST Microwave Studio software packages.We have chosen p-Si and p-Ge semiconductor substrates for the band-pass filter.The obtained 3.162-3.971GHz passband is suitable for the 5G applications.The investigation has also showed that the electrical conductivity of the substrate has impact on the S-parameters of the band-pass filter.The passband of the band-pass filter becomes narrower with the increase of the electrical conductivity of the substrate.