材料科学
GSM演进的增强数据速率
堆积
光电子学
铟
半导体
氧化物
晶体管
功率消耗
功率（物理）
电气工程
纳米技术
计算机科学
工程类
化学
冶金
电信
物理
电压
有机化学
量子力学
作者
Hitoshi Kunitake,Haruyuki Baba,Naoki Okuno,Y. Ito,Masahiro Takahashi,Yasuhiro Jimbo,Ryota Hodo,Yasuyoshi Kurokawa,Tatsuya Onuki,Shinya Sasagawa,Yasumasa Yamane,Shunpei Yamazaki
出处
期刊：ECS transactions
[The Electrochemical Society]
日期：2021-05-07
卷期号：102 (2): 3-18
被引量：4
标识
DOI：10.1149/10202.0003ecst
摘要
An oxide semiconductor field-effect transistor (OSFET) using c-axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) exhibits extremely low off-state current (Ioff) and can be fabricated at a low process temperature that is 400°C or lower. The features indicate that the CAAC-IGZO FET is suitable for a monolithic stacking process and application to artificial intelligence (AI). This paper shows electric characteristics of the CAAC-IGZO FET and their factors.
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