Intrinsic device parameter extraction method for zinc oxide-based thin-film transistors

Abstract We present a device parameter extraction method that enables the reliable extraction of the intrinsic device parameters of zinc oxide (ZnO) thin-film transistors (TFTs). By assuming that mobility and contact resistance were modeled as gate bias-dependent power-laws, we derived a current–voltage relationship that decoupled from the contact resistance effect. In accordance with this derived relationship, we extracted the intrinsic mobility and contact resistance using the modified method, the values being consistent with the parameters extracted using the four-probe method.