材料科学
退火(玻璃)
兴奋剂
硅
二次离子质谱法
电阻率和电导率
掺杂剂活化
硼
钝化
光电子学
镓
掺杂剂
分析化学(期刊)
离子
化学
纳米技术
图层(电子)
冶金
电气工程
有机化学
工程类
色谱法
作者
Thien N. Truong,Tien T. Le,Donghang Yan,Sieu Pheng Phang,Mike Tebyetekerwa,Matthew R. Young,Mowafak Al‐Jassim,Andrés Cuevas,Daniel Macdonald,Josua Stückelberger,Hieu T. Nguyen
出处
期刊:Solar RRL
[Wiley]
日期:2021-10-24
卷期号:5 (12)
被引量:3
标识
DOI:10.1002/solr.202100653
摘要
A doping technique for p‐type poly‐Si/SiOx passivating contacts using a spin‐on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ρ c ) are investigated. For all as‐annealed samples at different drive‐in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ∼680 to ∼610 mV) and increment in ρ c (from ∼3 to ∼800 mΩ cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (∼700 mV with Ga‐B co‐doped, and ∼720 mV with all Ga). Interestingly, when co‐doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary‐ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically‐active Ga and B in the poly‐Si and Si layers. These results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly‐Si and Si layers, and the annealing effects.
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