Electrical Characteristics and Impedance Spectra of Gd<sub>2</sub>O<sub>3</sub>-Doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Ceramics

The electrical properties of Gd 2 O 3 -bismuth titanate (Bi 4-x Gd x Ti 3 O 12 ) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi 4 Ti 3 O 12 and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.