Confirmation on the size-dependence of Young's modulus of single crystal silicon from the TEM tensile tests
作者
Q H Jin,Tianyu Li,Yongliang Wang,Xueqing Gao,Fangfang Xu
出处
期刊:Proceedings of IEEE Sensors日期:2010-11-01卷期号:: 2530-2533被引量:6
标识
DOI:10.1109/icsens.2010.5690465
摘要
With the developed process, four MEMS tensile testing chips of;-oriented single crystal silicon (SCS) nanobeams were achieved in one SOI wafer with thickness from 45 to 100 nm. Mounting the chips onto a custom made TEM sample holder, which integrated also comb drives and force sensor beam, in-situ TEM tensile tests were carried out. The measured Young's modulus (from 74 Gpa to 178 Gpa) is in agreement well with our previous results of tensile tests in SEM. A simple model was constructed to explain the behaviors of the Young's modulus by tensile tests, resonance tests and pull-in tests since all datas approach to ~75 GPa when the nanobeam's thickness close to 40 nm.