Piezoresistive effects in thick film resistors for strain sensing applications
作者
D.V. Kerns,W.P. Kang,A.R. Ali-Ali
标识
DOI:10.1109/secon.1989.132392
摘要
Experimental investigations of piezoresistive effects in thick-film resistors were performed by measuring longitudinal and transverse gauge factors as a function of applied strain on two different substrates' thickness. The relative change in resistance of the thick-film resistors studied was linear, symmetric, reproducible, and free of measurable hysteresis for strain between 0 and +or-1000 microstrain. A gauge factor of approximately twice that previously reported was obtained. The suitability of this technology for strain-sensing applications is discussed.< >