Optimization of deposition parameters for MPCVD diamond coatings grown on WC-Co substrates using the Taguchi and analytical hierarchy process methods

In this study, substrate temperature (t), total pressure (p), methane flow (M), and carbon dioxide flow (C) were examined for depositing diamond coatings on cemented tungsten carbide substrates (WC-Co; 6 wt.%) under an atmosphere of CH 4 –H 2 –CO 2 . The Taguchi method and analytical hierarchy process method were used to plan the parameters and the sequencing of the parameters, respectively. The results show that three schemes with improved parameters could be identified using the Taguchi method, and the best sequence for these parameters (t = 750 °C; p = 6 kPa; M = 7 mL/min; C = 4 mL/min) was obtained using the analytical hierarchy process method; these results were verified experimentally.