Residual stress distribution in wafers ground by different grinding parameters

Residual stress is the most concerned issue in wafer grinding process, because it affects wafer performance and can induce wafer warpage. In this paper, the residual stress in wafers machined by different processing parameters is measured by Raman Spectroscopy. The effects of wheel feed rate, wheel rotating speed and wafer rotating speed on residual stress are investigated. Radial distance as a dimensional parameter, whose effect on residual stress is also studied. The results show that the grinding parameters have influence on residual stress. Residual stress on wafer surface presents non uniform distribution. The residual stress close to wafer center is less than that on periphery. Investigations on residual stress of wafers machined by various processing parameters are important to parameters optimization. To explain the formation mechanism of residual stress, the surface and subsurface damages are observed by Scanning Electron Microscope (SEM).