光电探测器
响应度
材料科学
紫外线
光电子学
光电导性
偏压
半导体
带隙
探测器
电压
光学
物理
量子力学
作者
Yi Gao,Shuijin Lei,Ting-Ting Kang,Linfeng Fei,Chee Leung Mak,Jian Yuan,Mingguang Zhang,Shaojuan Li,Qiaoliang Bao,Zhongming Zeng,Zhao Wang,Haoshuang Gu,Kai Zhang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2018-03-27
卷期号:29 (24): 244001-244001
被引量:86
标识
DOI:10.1088/1361-6528/aab9d2
摘要
Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW-1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.
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