尖峰神经网络
电阻随机存取存储器
计算机科学
神经形态工程学
电子线路
磁阻随机存取存储器
生物神经网络
人工神经网络
功率消耗
记忆电阻器
人工神经元
CMOS芯片
计算机硬件
随机存取存储器
电子工程
人工智能
电气工程
功率(物理)
工程类
机器学习
物理
电压
量子力学
作者
Dongseok Kwon,Sung-Yun Woo,Jong‐Ho Lee
标识
DOI:10.5573/jsts.2022.22.2.115
摘要
To process data operations more efficiently in deep neural networks (DNNs), studies on spiking neural networks (SNNs) have been conducted. In the reported literature, CMOS neuron circuits that mimic the biological behavior of an integrate-and-fire function of neurons have been mainly studied. Because conventional neuronal circuits need to be improved in terms of area and energy consumption, neuron devices with memory functions such as resistive random access memory (RRAM), phase-change random access memory (PCRAM), magnetic random access memory (MRAM), floating body FETs, and ferroelectric FETs have been emerged to replace a membrane capacitor and trigger device in the conventional neuron circuits. In this review article, neuron devices that can increase the integration density of conventional neuronal circuits and reduce power consumption are reviewed. These devices are expected to play an important role in future neuromorphic systems.
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