神经形态工程学
材料科学
薄膜
异质结
脉冲激光沉积
非易失性存储器
纳米孔
光电子学
电阻随机存取存储器
纳米技术
电压
人工神经网络
电气工程
计算机科学
工程类
机器学习
作者
Zonglin Lv,Hongwei Wang,Jinpeng Cao,Chao Zhang,Guo Ping Zhao,Richeng Yu,Bo Zhang,Xiaoguang Xu,Yong Jiang,Jun Miao
标识
DOI:10.1002/admi.202201005
摘要
Abstract A direct coupling of antiferroelectric (AFE) and resistive switching (RS) is realized for the first time in an oxide heterostructures (non‐tunneling mechanisms). This allows the resistance of the heterostructure to switch between volatile and non‐volatile RS behavior, which indicates a threshold RS and broadly increases its practical applicability. The stacks of Pt/PbZrO 3 (PZO)/LaNiO 3 /SrTiO 3 (STO) is fabricated by laser pulse deposition. It exhibits a tunable RS behavior from volatile to nonvolatile through adjusting voltage amplitude. Moreover, a high ON/OFF ratio, good retention, and endurance characteristics are achieved. Furthermore, synaptic behaviors related to neural learning functions in PZO film is explored, that is, long‐term potential/depression, spike timing dependent plasticity, and paired pulse facilitation. This work provides a way to engineer AFE and RS pertinent functionality for the low‐energy‐consumption, non‐volatile neural computing.
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