可靠性(半导体)
消散
CMOS芯片
晶体管
帧(网络)
计算机科学
电子线路
电子工程
功率(物理)
电气工程
可靠性工程
工程类
电信
物理
热力学
电压
量子力学
作者
C. Prasad,S. Ramey,Lei Jiang
标识
DOI:10.1109/irps.2017.7936336
摘要
On advanced technology nodes, increases in power density, non-planar architectures and different material systems can exacerbate local self-heating due to active power dissipation, which can affect device performance and reliability in various ways. This paper presents an overview of the research on self-heating in transistors and discusses modulators, measurement schemes, spatio-temporal sensitivities, and impacts on performance and reliability. As the industry continues to scale dimensions and power densities, the significance of self-heating effects will continue to grow, and a robust frame-work to fully assess it, and deal with its impacts to circuits and IP blocks are essential.
科研通智能强力驱动
Strongly Powered by AbleSci AI