串联
钙钛矿(结构)
材料科学
缓冲器(光纤)
光电子学
薄膜
堆积
图层(电子)
透射率
光伏系统
硅
吸收(声学)
纳米技术
化学
复合材料
计算机科学
电气工程
电信
工程类
有机化学
结晶学
作者
Hyung‐Jun Song,Hyunho Lee,SeJin Ahn,Hee‐eun Song,Changhee Lee
标识
DOI:10.7567/jjap.57.102303
摘要
Perovskite photovoltaic cells (PVs) and their tandem application with silicon PVs are strong candidates for low-cost energy harvesting device. To utilize efficient perovskite-based tandem devices, parasitic absorption from buffer layers should be minimized. Here, we demonstrated an infrared (IR)-transparent perovskite PV employing ultra-thin buffer layers. Since vacuum-deposited layers follow underlying structure, thermally evaporated thin buffer layer (<15 nm) successfully covers perovskite film. These thin buffer layers provide selective carrier transport to the electrode because of their high energy barrier (>1 eV) compared to active layer. Moreover, as a result of reduced parasitic absorption, the transmittance of device with thin buffer layers is over 80% at near IR region (800–1100 nm), which allows low energy photons to penetrate top cell of tandem device. The engineering of a top perovskite PV and stacking it with commercialized silicon PVs lead to 19.4% (four-terminal) efficient tandem devices.
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